Lv1
20 积分 2025-04-15 加入
NIST Standard Reference Database Number 69
3天前
求助中
Reaction mechanism and film properties of the atomic layer deposition of ZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor
4天前
已完结
Influence of process parameters on atomic layer deposition of ZrO2 thin films from CpZr(NMe2)3 and H2O
4天前
已完结
Reaction mechanism of atomic layer deposition of zirconium oxide using tris(dimethylamino)cyclopentadienyl zirconium: experimental and theoretical study
4天前
已完结
Blocking mechanisms in area-selective ALD by small molecule inhibitors of different sizes: Steric shielding versus chemical passivation
6天前
已完结
Improvement of Corrosion Resistance and Electrical Conductivity of Stainless Steel 316L Bipolar Plate by Pickling and Passivation
7天前
已完结
Erosion and Passivation of Borated 254 SMO Stainless Steel in Simulated Flue Gas Desulfurization Solution
7天前
已完结
Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization
19天前
已完结
Theoretical Design Strategies for Area-Selective Atomic Layer Deposition
19天前
已完结
Layer-by-layer NH3 plasma treatment for area-selective atomic layer deposition of high-quality SiO2 thin films
19天前
已完结
皖公网安备34019202002308
