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168 积分 2022-11-24 加入
Threshold Voltage Adjustment of Commercial SiC MOSFETs During Gate Oxide Screening By Low Field Pulse
1天前
已完结
Static Characteristics and Avalanche Robustness of SiC Mosfet With P-Well Surface Doping Investigation
7天前
已完结
Novel 1.2kV 4H-SiC Deep P-Well One-Channel MOSFET with Asymmetric Channel Design
7天前
已完结
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress
7天前
已完结
Field-Effect-Stimulated Optical Spectra in SiC MOSFETs: Similarities Between Gate Switching Stress and DC Gate Stress
7天前
已完结
Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)
8天前
已完结
Junction Technology on SiC Power Devices
8天前
已完结
Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation
29天前
已完结
Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode
1个月前
已完结
Reliability Study of Various Edge Terminations of Silicon Carbide Power Devices Using Simulation Methods
1个月前
已完结
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