Lv23
150 积分 2022-11-24 加入
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress
6小时前
已完结
Transition-Region Co-Optimization for Enhanced dV/dt Ruggedness in 4H-SiC MOSFETs
13天前
已完结
Investigation of breakdown voltage degradation in low-voltage narrow gate trench MOSFET by edge termination optimization
14天前
已完结
DV/dt-Induced degradation and failure mechanisms in 1200 V SiC MOSFETs under dynamic reverse bias stress
15天前
已完结
Overcurrent turn-off robustness and stability of the switching behavior of SiC MOSFET body diodes
16天前
已完结
Dynamic Reverse Bias Reliability Testing of SiC MOSFETs
16天前
已完结
Impact of Insulating Layer Design in the Termination Region of SiC Devices on H3TRB Test
16天前
已完结
SiC MOSFET Reliability Assessment Under Accelerated Dynamic Reverse Bias Methodology
27天前
已完结
Digital Design for High-Performance IGBT Devices Using Machine Learning and Multi-Physics Simulation
27天前
已关闭
Enhancing Split-Gate MOSFET Efficiency Via Source Resistance and Layout Optimisation
28天前
已完结
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