Lv3
306 积分 2025-11-18 加入
Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/Al X Ga(1-X)N/GaN MIS-HEMT for High Vth and Low R on,sp
13小时前
已完结
Optimization of structural parameters in Omega(Ω)-Shaped gate p-GaN MIS-HEMT for performance improvement
13小时前
已完结
Hybrid p-GaN/MIS Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability
4天前
已完结
High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure
4天前
已完结
Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT
1个月前
已完结
A Novel Embedded p‐GaN Resistor Design in p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors for Enhanced Performance
1个月前
已完结
Dual barrier with recessed gate GaN HEMTs for improved DC and RF performance
1个月前
已完结
Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications
1个月前
已完结
Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications
1个月前
已完结
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
1个月前
已完结
皖公网安备34019202002308
