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176 积分 2024-09-05 加入
Robust Vth stability in normally off GaN HEMTs with a stacked p + /p − -NiO gate: Suppression of interface trapping and electric-field crowding
1个月前
已关闭
A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode
1个月前
已完结
Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
1个月前
已完结
3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination
1个月前
已完结
Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy
2个月前
已完结
Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
4个月前
已完结
Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study
4个月前
已完结
2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate
5个月前
已完结
Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates
5个月前
已完结
Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate
5个月前
已完结
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