| 标题 |
Robust Vth stability in normally off GaN HEMTs with a stacked p + /p − -NiO gate: Suppression of interface trapping and electric-field crowding |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Ruiling Gong; Na Sun; Guang Qiao; Yanghu Peng; Hui Guo; et al 出版日期:2026-03-18 |
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(2025-6-4)