Lv41
454 积分 2023-09-25 加入
Process integration and future outlook of 2D transistors
1个月前
已完结
Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET
1个月前
已完结
300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling
1个月前
已完结
Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling
1个月前
已完结
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials
1个月前
已完结
Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2
1个月前
已完结
Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density
1个月前
已完结
Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre
1个月前
已完结
Toward Automated Defect Extraction From Bias Temperature Instability Measurements
1个月前
已完结
Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2
1个月前
已完结
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