Lv4
452 积分 2023-09-25 加入
Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously
2个月前
已完结
Process integration and future outlook of 2D transistors
4个月前
已完结
Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET
4个月前
已完结
300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling
4个月前
已完结
Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling
4个月前
已完结
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials
4个月前
已完结
Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2
4个月前
已完结
Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density
4个月前
已完结
Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre
4个月前
已完结
Toward Automated Defect Extraction From Bias Temperature Instability Measurements
5个月前
已完结
皖公网安备34019202002308
