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368 积分 2023-09-25 加入
Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates
3小时前
已完结
Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate
3小时前
求助中
Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions
4小时前
已完结
An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC
4小时前
已完结
Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
4小时前
已完结
High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates
4小时前
待确认
Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate
4小时前
已完结
70-nm-gated InAlN/GaN HEMTs grown on SiC substrate withfT/fmax> 160 GHz
4小时前
已完结
A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT
4小时前
已完结
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
4小时前
已完结
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