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Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers
9小时前
已完结
Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities
10小时前
已完结
High-temperature N ion implantation for performance-enhanced current-blocking layers in β-Ga2O3
1个月前
已完结
Defect evolution and nitrogen incorporation in ion-implanted β-Ga2O3
1个月前
已完结
Ion implantation in β-Ga2O3: Physics and technology
2个月前
已完结
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