Lv21
150 积分 2026-05-27 加入
Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers
1个月前
已完结
Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities
1个月前
已完结
High-temperature N ion implantation for performance-enhanced current-blocking layers in β-Ga2O3
3个月前
已完结
Defect evolution and nitrogen incorporation in ion-implanted β-Ga2O3
3个月前
已完结
Ion implantation in β-Ga2O3: Physics and technology
3个月前
已完结
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