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52 积分 2025-04-02 加入
Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive
12小时前
待确认
First-principles insights into the synergistic chemical–mechanical removal mechanism of 4H-SiC in chemical mechanical polishing
12小时前
待确认
Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries
12小时前
已完结
A Facile One-Pot Synthesis of δ-MnO2 Catalyst for Efficient Chemical Mechanical Polishing of SiC Wafer
13小时前
已完结
Recent Advances in Chemical Mechanical Polishing Technologies of Silicon Carbide
20天前
已完结
ReaxFF molecular dynamics of chemical reaction mechanism of SiC crystal with alcoholic additives in CMP
25天前
已完结
The Effect of Surface Polarity on the CMP Behavior of 6H-SiC Substrates
25天前
已完结
Mechanistic insights into the synergistic effect of oxidizers and abrasives in chemical mechanical polishing of 4H-SiC wafer
26天前
已关闭
Molecular dynamics simulation of SiC oxide layer mechanical polishing
26天前
已完结
Physics of the Coefficient of Friction in CMP
1个月前
已关闭
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