Lv49
528 积分 2024-09-03 加入
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers
5天前
已关闭
Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
5天前
已完结
Impact of growth temperature on the structural properties of BGaN films grown by metal-organic vapor phase epitaxy using trimethylboron
7天前
已完结
First-principles study on electronic and elastic properties of BN, AlN, and GaN
13天前
已完结
Band alignments and polarization properties of BN polymorphs
13天前
已完结
电泵浦AlGaN基紫外激光器结构优化研究
13天前
已关闭
Erratum: “Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering” [Appl. Phys. Lett. 111, 222106 (2017)]
14天前
已关闭
Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers
27天前
已完结
Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters Using Al-Content Engineered Superlattice Electron Blocking Layer
1个月前
已完结
Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport
1个月前
已关闭
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