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120 积分 2024-09-03 加入
Research Progress on Reliable Packaging Technologies for AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes
12天前
已完结
In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition
6个月前
已完结
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
6个月前
已完结
Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates
6个月前
已完结
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
6个月前
已完结
Band parameters for nitrogen-containing semiconductors
6个月前
已完结
Band parameters for III–V compound semiconductors and their alloys
6个月前
已完结
GaN/SiC avalanche photodiodes
6个月前
已关闭
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
6个月前
已完结
Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
6个月前
已关闭
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