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28 积分 2025-10-10 加入
Smart Cut®: the technology used forhigh volume SOI wafer production
54分钟前
求助中
SMART-CUT(R) technology for SOI: A new high volume application for ion implantation
58分钟前
已完结
Comparison of Depth Profiling 10B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling
1天前
求助中
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy
1天前
已完结
Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si
1天前
已完结
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3天前
已完结
Contribution of Carbon to Activation and Diffusion of Boron in Silicon
8天前
已完结
Contribution of Carbon to Activation and Diffusion of Boron in Silicon
9天前
已完结
Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification
9天前
已完结
Mechanisms of boron diffusion in silicon and germanium
9天前
已完结
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