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32 积分 2026-01-08 加入
An AM-PM Compensation of Cross-Coupled Capacitance Neutralization Technique in a Differential Power Amplifier
21天前
已完结
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
1个月前
已完结
High-mobility nitrogen-polar GaN/AlGaN heterostructures via impurity modulation
1个月前
已完结
A Numerical Study on Die-Integrated Manifold Microchannel Heat Sinks Considering Transistor-Level Heat Dissipation of GaN Based MMIC Devices
3个月前
已完结
COMPARISION OF AlGaN/GaN AND AlGaAs/GaAs BASED HEMT DEVICE UNDER DOPING CONSIDERATION
5个月前
已完结
Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
5个月前
已完结
Performance Comparison of AlGaN/GaN HEMTs with Al0.05Ga0.95N and β-Ga2O3 Back Barriers on SiC Substrate for RF Applications
5个月前
已完结
Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications
5个月前
已完结
Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs
5个月前
已完结
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