Lv2
158 积分 2026-01-08 加入
A Numerical Study on Die-Integrated Manifold Microchannel Heat Sinks Considering Transistor-Level Heat Dissipation of GaN Based MMIC Devices
1个月前
已完结
COMPARISION OF AlGaN/GaN AND AlGaAs/GaAs BASED HEMT DEVICE UNDER DOPING CONSIDERATION
3个月前
已完结
Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates
3个月前
已完结
Performance Comparison of AlGaN/GaN HEMTs with Al0.05Ga0.95N and β-Ga2O3 Back Barriers on SiC Substrate for RF Applications
3个月前
已完结
Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications
3个月前
已完结
Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs
3个月前
已完结
Optimized DC and RF Characteristics of ScAlN/InGaN/GaN HEMTs on Silicon Carbide using Step-graded AlGaN Buffer Layers
3个月前
已完结
Impact and Analysis of Al Composition in Barrier and Buffer regions of AlxGA(1–x)N/GaN HEMT Device using TCAD Simulations
3个月前
已完结
皖公网安备34019202002308
