Lv712
4220 积分 2020-08-31 加入
Influence of different channel crystal orientation on performance of 4H-SiC MOSFET
4天前
已完结
Impact of Cell Orientation on 1.2 kV 4H-SiC MOSFETs with Channeling Implanted Deep P-well
5天前
已完结
Switching Loss Reduction in Superjunction IGBTs via Analysis of Vertical Charge Imbalance
1个月前
已完结
Extreme Optimization of 1200V SuperJunction IGBT, Competing with SiC MOSFET
1个月前
已完结
Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices
1个月前
已完结
Investigation of Termination Soft Breakdown Mechanisms in 1700V-SiC MOSFETs Under HTRB with Different Temperatures
1个月前
已完结
Development of SiC Superjunction MOSFET: A Review
2个月前
已完结
Optimization of superjunction MOSFET dynamic performance using Si1−Ge strained silicon
2个月前
已完结
Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress
2个月前
已完结
Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance
2个月前
已完结
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