Lv7
5000 积分 2020-08-31 加入
Planar edge terminations for high voltage 4H-SiC power MOSFETs
25天前
已完结
Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS
25天前
已完结
A novel combined charge balance termination structure insensitive to ionizing radiation effect
28天前
已完结
Theory of 3-D Superjunction MOSFET
1个月前
已完结
A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study
3个月前
已完结
The effect of interface trapped charge on threshold voltage shift estimation for gamma irradiated MOS device
3个月前
已完结
The Accurate AC BTI Prediction of SiC Power MOSFETs by Comprehensive Understanding of Physical Mechanism Basic Vth Instability Phenomena
4个月前
已完结
Repetitive Short-Circuit Ruggedness of Different SiC MOSFET Channel Designs
4个月前
已完结
Closing the Gap Between State-of-the-Art and Space Grade Power Semiconductor Devices
4个月前
已完结
Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process
5个月前
已完结
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