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4660 积分 2020-08-31 加入
JTE concept evaluation and failure analysis: OBIC measurements on 4H SiC p/sup +/-n diodes
3小时前
已完结
Phosphorus-implanted high-voltage n/sup +/p 4H-SiC junction rectifiers
3小时前
已完结
Switching behaviour of fast high voltage SiC pn-diodes
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已完结
Turn-off characteristics of 1000 V SiC gate-turn-off thyristors
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已完结
Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers
3小时前
已完结
1.4 kV 4H-SiC UMOSFET with low specific on-resistance
3小时前
已完结
Comparison of 6H-SiC and 4H-SiC high voltage planar ACCUFETs
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已完结
A novel P/sup +/ polysilicon/N/sup -/SiC heterojunction trench gate vertical FET
3小时前
已完结
Measurement of electron and hole impact ionization coefficients for SiC
3小时前
已完结
The potential of fast high voltage SiC diodes
3小时前
已完结
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