Lv3
300 积分 2025-02-19 加入
A first-principles hetero-integrated Fourier transform system based on memristors
3个月前
已完结
Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory
4个月前
已完结
The growing memristor industry
4个月前
已完结
Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
5个月前
已完结
Low power NiN-based resistive switching memory device using Ti doping
5个月前
已完结
Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure
5个月前
已完结
Superior rectification self-rectifying memristors with self-recovery capabilities enabled by GaOx/InOx heterostructures
5个月前
已关闭
Boron‐Doped Engineering for Carbon Quantum Dots‐Based Memristors with Controllable Memristance Stability
6个月前
已完结
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
6个月前
已完结
Ionic doping effect in ZrO2 resistive switching memory
6个月前
已完结
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