Lv3
280 积分 2025-02-19 加入
Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
7天前
已完结
Low power NiN-based resistive switching memory device using Ti doping
16天前
已完结
Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure
23天前
已完结
Superior rectification self-rectifying memristors with self-recovery capabilities enabled by GaOx/InOx heterostructures
1个月前
已关闭
Boron‐Doped Engineering for Carbon Quantum Dots‐Based Memristors with Controllable Memristance Stability
1个月前
已完结
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
1个月前
已完结
Ionic doping effect in ZrO2 resistive switching memory
1个月前
已完结
Multielement Filament Memristor Enabling Multifunctional Neuromorphic Device
1个月前
已完结
Doping Engineering for Optimized Self‐Rectifying TaOx Memristor for Crossbar Array Neuromorphic applications
1个月前
已完结
Boron‐Doped Engineering for Carbon Quantum Dots‐Based Memristors with Controllable Memristance Stability
1个月前
已完结
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