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42 积分 2026-02-27 加入
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air
1小时前
待确认
Non-volatile, small-signal capacitance in ferroelectric capacitors
16天前
已完结
MD simulations of GaN sputtering by Ar+ ions: Ion-induced damage and near-surface modification under continuous bombardment
16天前
已关闭
Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes
21天前
已完结
Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers
22天前
已完结
Effect of N2-flow on nitrogen vacancies, leakage, and polarization switching in sputtered ferroelectric AlScN films
1个月前
已完结
Polarity control of sputter-deposited wurtzite AlScN thin films by AlSc seed layer
1个月前
已完结
Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor
3个月前
已完结
Epitaxial high-K barrier AlBN/GaN HEMTs
4个月前
已完结
Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
4个月前
已完结
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