| 标题 |
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air |
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| DOI | |
| 其它 |
期刊:Semiconductor Science and Technology 作者:Ateeq J. Suria; Ananth Saran Yalamarthy; H. So; D. Senesky 出版日期:2016-10-13 |
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(2025-6-4)