Lv1
35 积分 2022-01-08 加入
Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3
11个月前
已完结
Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
11个月前
已完结
Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
11个月前
已完结
Surface Electron Accumulation and the Charge Neutrality Level inIn2O3
11个月前
已完结
Effective mass of high-mobilityIn2O3-based transparent conductive oxides fabricated by solid-phase crystallization
11个月前
已完结
Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment
11个月前
已完结
皖公网安备34019202002308
