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35 积分 2022-01-08 加入
Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3
3个月前
已完结
Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
3个月前
已完结
Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
4个月前
已完结
Surface Electron Accumulation and the Charge Neutrality Level inIn2O3
4个月前
已完结
Effective mass of high-mobilityIn2O3-based transparent conductive oxides fabricated by solid-phase crystallization
4个月前
已完结
Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment
4个月前
已完结
Hydrogen-doped In2O3 transparent conducting oxide films prepared by solid-phase crystallization method
5个月前
已完结
Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
1年前
已完结
Trap densities in amorphous-InGaZnO4 thin-film transistors
1年前
已完结
Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs
1年前
已完结
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