| 标题 |
Simulation of enhanced short-circuit ruggedness in GaN HEMTs with a step-graded-doped p-GaN buried layer |
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| DOI | |
| 其它 |
期刊:Semiconductor Science and Technology 作者:Haoran Liu; Manjing Wang; Jiancheng Yuan; Xuan Li; Jiamao Chen; et al 出版日期:2026-08-01 |
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(2025-6-4)