| 标题 |
Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy |
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| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:F. Yun; Y. Moon; Y. Fu; K. Zhu; Ü. Özgür; et al 出版日期:2005-12-16 |
| 求助人 | |
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(2025-6-4)