| 标题 |
Influence of bilayer high- k Al 2 O 3 and HfO 2 gate insulators on the electrical performance of amorphous oxide thin-film transistors |
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| DOI | |
| 其它 |
期刊:Journal of Physics D: Applied Physics 作者:Dian Budiarti Kastian; Juan Paolo S Bermundo; Yukiharu Uraoka 出版日期:2026-01-29 |
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(2025-6-4)