| 标题 |
[高分]
Study on the Electrical Characteristics of Al-rich AlGaN HEMT with TiN Gate |
| 网址 | |
| DOI |
10.5370/kiee.2026.75.9.2158
doi
|
| 其它 |
期刊:The Transactions of The Korean Institute of Electrical Engineers 作者:Ryeong-Eun Kim; Ju-eun Yun; Ho-Young Cha; Hyun-Seop Kim 出版日期:2026-09-30 |
| 求助人 | |
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(2025-6-4)