| 标题 |
Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV) |
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| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Swarnav Mukhopadhyay; Khush Gohel; Surjava Sanyal; Mayand Dangi; Rajnin Imran Roya; et al 出版日期:2025-04-01 |
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(2025-6-4)