| 标题 |
Preparation of device‐quality SiO2 thin films by remote plasma‐enhanced chemical vapour deposition (PECVD): Applications in metal‐oxide‐semiconductor (MOS) devices |
| 网址 | |
| DOI | |
| 其它 |
期刊:Advanced Materials for Optics and Electronics 作者:G. Lucovsky 出版日期:1996-03-01 |
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(2025-6-4)