| 标题 |
Strain-engineered photogalvanic anisotropy in SnP2X6 (X = S, Se) monolayers for high-performance optoelectronics |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:Yunkang Tang; Liang Ma; Xing Xu; Yicheng Wang; Zhiqiang Li; et al 出版日期:2026-01-16 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)