| 标题 |
A 1.6 kV Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination |
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| DOI | |
| 其它 |
期刊:Nanomaterials 作者:Xinlong Zhou; Jining Yang; Hao Zhang; Yinchi Liu; Genran Xie; et al 出版日期:2024-06-05 |
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(2025-6-4)