| 标题 |
A novel p-GaN HEMT with superjunction silicon substrate for improved current collapse |
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| DOI | |
| 其它 |
期刊:Micro and nanostructures 作者:Boyuan Feng; Ying Wang; Cheng‐Hao Yu; Haomin Guo 出版日期:2025-02-14 |
| 求助人 | |
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(2025-6-4)