| 标题 |
 Joint Optimization of Drift and P-Well Doping Profiles for High-Voltage 4H-SiC MOSFETs Using Physics-Guided Machine Learning |
| 网址 | |
| DOI |
10.1109/TED.2023.3267891
doi
|
| 求助人 | |
| 下载 |
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(2025-6-4)
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