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28 积分 2025-02-24 加入
Analysis of Static and Dynamic Characteristics of 1.2 kV 4H-SiC Trench MOSFETs with Trenched P-Source and Buried P+ Layers
5小时前
已完结
Silicon carbide MOSFETs: A critical review of applications, technological advancements, and future perspectives
5小时前
已完结
Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETs
11天前
已完结
Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron,sp of 3.4 mΩ·cm²
12天前
已完结
Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices
12天前
已完结
Physics-Informed Deep Learning for Fast and Accurate Prediction of SiC MOSFET Static Characteristics
7个月前
已完结
Impact of P-Well and JFET Region Doping on the Trade-off Between Breakdown Voltage and Specific On-Resistance in 1.2-kV 4H-SiC MOSFETs
7个月前
已关闭
Joint Optimization of Drift and P-Well Doping Profiles for High-Voltage 4H-SiC MOSFETs Using Physics-Guided Machine Learning
7个月前
已关闭
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