| 标题 |
Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions |
| 网址 | |
| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Qi Zeng; Zhichao Yang; Xingfu Wang; Shuti Li; Fangliang Gao 出版日期:2024-02-06 |
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(2025-6-4)