| 标题 |
Defect Dynamics in Silicon-Doped HfO2-Based Front-End-of-Line FeFETs: Insights From Low-Frequency Noise on Doping Concentration, Interfaces, and Write Cycling |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Yannick Raffel; Daniel Hessler; Gautham Kumar; Ricardo Olivo; Luca Pirro; et al 出版日期:2025-05-10 |
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(2025-6-4)