| 标题 |
Impact of P-Well and JFET Region Doping on the Trade-off Between Breakdown Voltage and Specific On-Resistance in 1.2-kV 4H-SiC MOSFETs |
| 网址 | |
| DOI |
10.1109/JESTPE.2022.3156782
doi
|
| 求助人 | |
| 下载 | 暂无链接,等待应助者上传 |