| 标题 |
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Enrico Zanoni; Carlo De Santi; Zhan Gao; Matteo Buffolo; Mirko Fornasier; et al 出版日期:2024-03-01 |
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(2025-6-4)