| 标题 |
Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs |
| 网址 | |
| DOI |
10.1103/g29w-st3q
doi
|
| 其它 |
期刊:Physical review 作者:J. P. Wendoloski; J. Hillier; S. D. Liles; M. J. Rendell; Y. Ashlea-Alava; et al 出版日期:2025-10-28 |
| 求助人 | |
| 下载 |
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(2025-6-4)