| 标题 |
A GaN HEMT Active Gate Driver to Combat Turn-Off Drain-Source Voltage Overshoot and EMI Based on Magnetic Coupling Closed-Loop Control |
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| 其它 |
期刊:IEEE Transactions on Power Electronics 作者:Lurenhang Wang; Yishun Yan; Mingcheng Ma; Xizhi Sun; Shuaiqing Zhi; Dianguo Xu 出版日期:2025 |
| 求助人 | |
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(2025-6-4)