| 标题 |
Reliability Enhancement SCFP-Treated Lateral β -Ga 2 O 3 MOSFETs With Low Interface Traps of ~10 10 cm –2 ⋅ eV –1 and Highest PFOM of 532 MW/cm 2 |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Electron Devices 作者:Zhang Wen; Mingchao Yang; Songquan Yang; Ming Li; Bangyao Mao; et al 出版日期:2026-01-01 |
| 求助人 | |
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(2025-6-4)