| 标题 |
Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit |
| 网址 | |
| DOI | |
| 其它 |
期刊:Materials Science and Engineering: B 作者:Ellapu Bhanu Prakash; Anil Prasad Dadi; Vijay Maitra; Tathagata Ghose; Ashok Ray; Sushanta Bordoloi 出版日期:2026-01-22 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)