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Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects |
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期刊:Journal of Applied Physics 作者:Sandeep K. Chaudhuri; Joshua W. Kleppinger; Krishna C. Mandal 出版日期:2020-09-18 |
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(2025-6-4)