| 标题 |
First-principles simulation of neutral and charged oxygen vacancies in m-ZrO2: an origin of filamentary type resistive switching |
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| DOI | |
| 其它 |
期刊:Nanotechnology 作者:Rajneesh Chaurasiya; Pei‐En Lin; Cheng-Han Lyu; Kuan-Ting Chen; Li‐Chung Shih; et al 出版日期:2022-05-18 |
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(2025-6-4)