| 标题 |
Extended defect formation and the flux of interstitials in Si-ion implanted silicon |
| 网址 | |
| DOI | |
| 其它 |
期刊:Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 作者:T. W. Simpson; I. Mitchell 出版日期:1997-05-02 |
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(2025-6-4)