| 标题 |
Novel Internal Gate-to-Gate Crosstalk Phenomenon in Monolithic Bidirectional GaN-on-Si HEMTs |
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| DOI | |
| 其它 |
期刊:2026 IEEE Applied Power Electronics Conference and Exposition (APEC) 作者:Hongchang Cui; Haozhe Jin; Jian Guo; Yuhao Zhang 出版日期:2026-05-21 |
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(2025-6-4)