Lv4
510 积分 2023-03-15 加入
Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT
1个月前
已完结
The effects of an LPCVD SiN x stack on the threshold voltage and its stability in AlGaN/GaN MIS-HEMTs
1个月前
已完结
Study on a p-GaN HEMT with composite passivation and composite barrier layers
2个月前
已完结
The effect of Si3N4/SiNX stacked structure for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors
2个月前
已完结
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
2个月前
已完结
Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination
4个月前
已完结
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer
4个月前
已完结
A 93.9% Peak Efficiency 3V-to-40V-Input GaN-based DC-DC Converter with Unified Reliability and Efficiency Adaptive Control
5个月前
已完结
A 96.1% Peak Efficiency, 6.8 kW/in3, 48V-to-6V On-package Intermediate Bus Converter with LV-GaN Power Transistors
5个月前
已完结
Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS
5个月前
已完结
皖公网安备34019202002308
