| 标题 |
[高分]
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process |
| 网址 | |
| DOI |
10.1587/elex.16.20190516
doi
|
| 其它 |
期刊:IEICE Electronics Express 作者:Yuki Yamashita; Steve Stoffels; Niels Posthuma; Karen Geens; Xiangdong Li; et al 出版日期:2019-10-29 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)