| 标题 |
Temperature-Dependent Raman and Spectroscopic Ellipsometry Analysis of MOCVD-Grown GaN/Si (111) Heterostructures With and Without Al2O3 Interlayers |
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| DOI | |
| 其它 |
期刊:Journal of Electronic Materials 作者:Manika Tun Nafisa; S M Atiqur Rahman; Zhe Chuan Feng; Ian T. Ferguson; Benjamin Klein 出版日期:2026-02-20 |
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(2025-6-4)