| 标题 |
 Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 n-FET and Polycrystalline Si p-FET: Achieving Large Noise Margin and High Voltage Gain of 134 V/V |
| 网址 | |
| DOI | |
| 其它 |
期刊：2022 International Electron Devices Meeting (IEDM) 作者：W. Tang; Z. Wang; Z. Lin; L. Feng; Z. Liu; et al 出版日期：2022 |
| 求助人 | |
| 下载 | 暂无链接，等待应助者上传 |
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(2025-6-4)
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