| 标题 |
Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation |
| 网址 | |
| DOI | |
| 其它 |
期刊:2021 IEEE International Electron Devices Meeting (IEDM) 作者:Yunzhe Zheng; Yonghui Zheng; Zhaomeng Gao; Jun-Hui Yuan; Yan Cheng; et al 出版日期:2021-12-11 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人或该文件上传人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)