| 标题 |
Carrier transport of diamond p+‐i‐n+ junction diode fabricated using low‐resistance hopping p+ and n+ layers |
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| DOI | |
| 其它 |
期刊:physica status solidi (a) 作者:Kazuhiro Oyama; Sung‐Gi Ri; Hiromitsu Kato; Daisuke Takeuchi; Toshiharu Makino; et al 出版日期:2011-01-07 |
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(2025-6-4)