| 标题 |
 First Demonstration of CVD Monolayer $\text{WSe}^{2}$ PFETs with Ultra-Short Channel Length of 16 nm: Achieving Record $\mathrm{I}_{\text{on}}$ of $1532 \mu \mathrm{A} / \mu \mathrm{m}$ at $\mathrm{V}_{\text{ds}}=-1 \mathrm{V}$ and Ballistic Efficiency of 81% |
| 网址 | |
| DOI | |
| 其它 |
期刊：2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 作者：Lei Sun; Tingting Gao; Lin Xu; Kai Wang; Kaustav Banerjee; et al 出版日期：2026-07-04 |
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