标题 |
Fractional Schrödinger–Poisson model for electron transport in disordered semiconductors. Journal of Applied Physics, 121:123456
无序半导体中电子输运的分数薛定谔-泊松模型。应用物理学报,121:123456
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其它 |
Zhao, B. & Xu, K. (2017). Fractional Schrödinger-Poisson model for electron transport in disordered semiconductors.Joural ofApplied Physics, 121:123456. |
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