| 标题 |
Demonstration of High Voltage (>1.7kV) GaN Negative-Capacitance Ferroelectric HEMTs Using HZO Gate Stack Achieving 47.89 mV/dec SS and Reduced ON-Resistance |
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| DOI | |
| 其它 |
期刊:2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 作者:Thi My Hanh Dao; Yu-An Chen; Hsien-Yang Liu; Tian-Li Wu 出版日期:2026-06-12 |
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(2025-6-4)