| 标题 |
Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Physical Chemistry Letters 作者:Huaile He; Chao Wu; Haizheng Hu; Shunli Wang; Fabi Zhang; et al 出版日期:2023-07-11 |
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(2025-6-4)