| 标题 |
[高分] Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application
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| 其它 | Zhao D X, Xia Z L, Huo Z L. Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application[C]//2021 IEEE Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2021. |
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(2025-6-4)
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